-
Acceptor - An element, such as boron,
indium, and gallium used to create
a
free hole in a semiconductor. The acceptor atoms
are required to have
one less valence
electron than the semiconductor.
受主
-
一
种用来在
半导体
中形成空穴的元素，比如硼、铟和镓。受
主原子必须比半导体元素少一价
电子
Alignment
Precision
-
Displacement
of
patterns
that
occurs
during
the
photolithography process.
套准精度
-
在光刻工艺中转移图形的精度。
Anisotropic - A process of etching that
has very little or no
undercut
ti
ng
各向异性
-
在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination - Any foreign
particles or material that are found on
the surface of a wafer. This is viewed
as discolored or smudged, and it is
the
result of stains, fingerprints, water spots, etc.
沾污区域
-
任何在晶圆片表面的外来粒子或物质。由沾污、手印和
水滴产生的污染。
Azimuth,
in
Ellipsometry
-
The
angle
measured
between
the
plane
of
incidence and the major axis of the
ellipse.
椭圆方位角
-
测量入射面和主晶轴之间的角度。
Backside - The bottom surface of a
silicon wafer. (Note: This term is not
preferred; instead, use ?back
surface?.)
背面
-
晶圆片的底部表面。（注：不推荐该术语，建议使用
“
背部表
面
”
）
Base
Silicon
Layer
-
The
silicon
wafer
that
is
located
underneath
the
insulator layer, which supports the
silicon film on top of the wafer.
底部硅层
-
在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar
-
Transistors
that
are
able
to
use
both
holes
and
electrons
as
charge carriers.
双极晶体管
-
能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that
have been bonded together by
silicon
dioxide, which acts as an insulating layer.
绑定晶圆片
-
两个晶圆片通过二氧化硅层结合到一起，
作为绝缘层。
Bonding Interface - The area where the
bonding of two wafers occurs.
绑定面
-
两个晶圆片结合的接触区。
Buried Layer - A path of low resistance
for a current moving in a device.
Many
of these dopants are antimony and arsenic.
埋层
-
为
了
电路
电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried
Oxide
Layer
(BOX)
-
The
layer
that
insulates
between
the
two
wafers.
氧化埋层
(BOX) -
在两个晶圆片间的绝缘层。
Carrier
-
Valence
holes
and
conduction
electrons
that
are
capable
of
carrying a charge through
a solid surface in a silicon wafer.
载流子
-
晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical
Polish
(CMP)
-
A
process
of
flattening
and
polishing
wafers
that
utilizes
both
chemical
removal
and
mechanical
buffing. It is
used during the fabrication process.
化学
-
机械抛光
(CMP)
-
平整和抛光晶圆片的工艺，采用化学移除和
机械抛光两种方式。此工艺在前道工艺中使用。
Chuck
Mark
-
A
mark
found
on
either
surface
of
a
wafer,
caused
by
either
a robotic end effector, a chuck, or a wand.
卡盘痕迹
-
在晶圆片任意表面发现的由机械手、卡盘或托盘造成的
痕迹。
Cleavage Plane - A fracture plane that
is preferred.
解理面
-
破裂面
Crack - A mark found on a wafer that is
greater than 0.25 mm in length.
裂纹
-
长
度大于
0.25
毫米的晶圆片表面微痕。
Crater - Visible under diffused
illumination, a surface imperfection on a
wafer that can be distinguished
individually.
微坑
-
在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) - A
measurement of how easily charge carriers
can flow throughout a material.
传导性
（电学方面）
-
一种关于载流子通过物质难易度的测量指标
。
Conductivity
Type
-
The
type
of
charge
carriers
in
a
wafer,
such
as
“N
-
type” and
“P
-
type”.
导电类型
-
晶圆片中载流子的类型，
N
型和
P<
/p>
型。
Contaminant,
Particulate (see light point defect)
污染微粒
（参见光点缺陷）
Contamination Area - An area that
contains particles that can negatively
affect the characteristics of a silicon
wafer.
沾污区域
-
部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination
Particulate
-
Particles
found
on
the
surface
of
a
silicon
wafer.
沾污颗粒
-
晶圆片表面上的颗粒。
Crystal
Defect
-
Parts
of
the
crystal
that
contain
vacancies
and
dislocation
s
that can have an impact on a circuit?s electrical
performance.
晶体缺陷
-
部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
晶体指数
（参见米勒指数）
Depletion Layer - A region on a wafer
that contains an electrical field that
sweeps out charge carriers.
耗尽层
-
晶圆片上的电场区域，此区域排除载流子。
Dimple
-
A
concave
depression
found on
the
surface
of
a
wafer
that
is
visible to the eye under the correct
lighting conditions.
表面起伏
-
在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor
-
A
contaminate
that
has
donated
extra
“free”
electrons,
thus
making
a
wafer “N
-
Type”.
施主
-
可
提供
“
自由
”
电子的搀杂物，使晶圆片呈现为
N
型。
Dopant
-
An
element
that
contributes
an
electron
or
a
hole
to
the
conduction
process,
thus
altering
the
conductivity.
Dopants
for
silicon
wafers
are
found
in
Groups
III
and
V
of
the
Periodic
Table
of
the
Elements.
搀杂剂
-
可以为传导过程提供电子或空穴的元素，此元素可以改变<
/p>
传导特性。晶圆片搀杂
剂可以在元素周期表的
III
和
V
族元素
中发
现。
Doping
-
The
process
of
the
donation
of
an
electron
or
hole
to
the
conduction process by a
dopant.
掺杂
-
把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge
Chip
and
Indent
-
An
edge
imperfection
that
is
greater
than
0.25
mm.
芯片
边缘和缩进
-
晶片中不完整的边缘部分超过
0.
25
毫米。
Edge
Exclusion
Area
-
The
area
located
between the
fixed quality
area
and the periphery of a
wafer. (This varies according to the dimensions of
the wafer.)
边缘排除区域
-
< br>位于质量保证区和晶圆片外围之间的区域。（根据
晶圆片的尺寸不同而有所不同。
）
Edge Exclusion, Nominal
(EE) - The distance between the fixed quality
area and the periphery of a wafer.
名义上边缘排除
(EE) -
质量保证区和晶圆片外围之间的距离。
Edge
Profile
-
The
edges
of
two
bonded
wafers
that
have
been
shaped
either chemically or
mechanically.
边缘轮廓
-
通过化学或机械方法连接起来的两个晶圆片边缘。
Etch
-
A
process
of
chemical
reactions
or
physical
removal
to
rid
the
wafer of excess
materials.
蚀刻
-
通过化学反应或物理方法去除晶圆片的多余物质。
Fixed
Quality
Area
(FQA)
-
The
area
that
is
most
central
on
a
wafer
surface.
质量保证区
(FQA) -
晶圆片表面中央的大部分。
Flat
-
A
section
of
the
perimeter
of
a
wafer
that
has
been
removed
for
wafer
orientation purposes.
平边
-
晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from
the center of the flat through the
center of the wafer to the opposite
edge of the wafer. (Perpendicular to
the flat)
平口直径
-
由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test equipment used
to test resistivity of wafers.
四探针
-
测量半导体晶片表面电阻的设备。
Furnace
and
Thermal
Processes
-
Equipment
with
a
temperature
gauge
used
for
processing
wafers.
A
constant
temperature
is
required
for
the
process.
炉管和热处理
-
温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon
wafer. (This term is not preferred;
use
front surface instead.)
正面
-
晶圆片的顶部表面
（此术语不推荐
，
建议使用
“
前部表面
”
）
。
Goniometer - An instrument used in
measuring angles.
角度计
-
用来测量角度的设备。
Gradient, Resistivity (not preferred;
see resistivity variation)
电阻梯度
（不推荐使用，参见
“
电阻变化
”
）
Groove - A scratch that was
not completely polished out.
凹槽
-
没有被完全清除的擦伤。
Hand
Scribe
Mark
-
A
marking
that
is
hand
scratched
onto
the
back
surface of a wafer for identification
purposes.
手工印记
-
为区分不同的晶圆片而手工在背面做出的标记。
Haze
-
A
mass
concentration
of
surface
imperfections,
often
giving
a
hazy
appearance to the wafer.
雾度
-
晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Hole
-
Similar
to
a
positive
charge,
this
is
caused
by
the
absence
of
a