pspice二级管参数总结

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OrCAD PSpice DIODE model parameter

2010-07-15 22:31

1.

从

OrCAD PSpice help

文档：

2.

国外网站的相关介绍：

SPICE Diode Model Parameters

1

2

3

4

name

IS

RS

N

TT

parameter

saturation current

ohmic resistanc

emission coefficient

transit-time

units

A

Ohm

-

sec

default

1.0e-14

0

1

0

example

1.0e-14

10

1.0

0.1ns

ar

*

*

5

6

7

8

9

10

11

12

13

14

CJO

VJ

M

EG

XTI

KF

AF

FC

BV

IBV

zero-bias junction capacitance

junction potential

grading coefficient

band-gap energy

saturation-current

flicker noise coefficient

flicker noise exponent

coefficient for forward-bias

depletion capacitance formula

reverse breakdown voltage

current at breakdown voltage

parameter measurement temperature

F

V

-

eV

-

-

-

-

V

V

deg C

0

1

0.5

1.11

3.0

0

1

0.5

infinite

1.0e-3

27

2pF

0.6

0.5

1.11 Si

3.0 pn

2.0 Schottky

40.0

50

*

15

TNOM

The DC characteristics of the diode are determined by the parameters IS, N, and the ohmic resistance RS.

Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance whic

determined by the parameters CJO, VJ, and M. The temperature dependence of the saturation current is

defined by the parameters EG, the band gap energy and XTI, the saturation current temperature exponent.

nominal temperature at which these parameters were measured is TNOM, which defaults to the circuit-wi

value specified on the .OPTIONS control line. Reverse breakdown is modeled by an exponential increase

the reverse diode current and is determined by the parameters BV and IBV (both of which are positive

numbers).

3.

国外网站关于

PSpice

其它模型 的参数介绍：如（三极管，达林顿管，场效应管，二极管）

Spice models

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?

?

?

?

Introduction

The MOD model file

The library file

Model parameters and limitations

o

Bipolars

o

Darlingtons

o

MOSFETs

o

Diodes

Further information

Introduction

Zetex have created Spice models for a range of semiconductor components. Models included are Schottky

varicap, high-performance bipolar (high current, low VCE(sat)), higher voltage bipolar, bipolar Darlingto

and MOSFET transistors. This range is continuously under review as new products are introduced and

retrospective models are generated for existing products.

The Spice models are available in two formats:

1.

A separate Spice model text file for each Zetex device type for which a model is presently availab

These can be accessed from the

Product Quickfinder

2.

All the available Zetex device models are collected together into a single .LIB text file called

.

A generic symbol library file is available called

that enables Windows? versions of PSpic

use the Zetex spice models. Further information on the symbol library, including installation instructions

be found in the text file called

The MOD Model File

Each of these files is a Spice model for a single device. They can be loaded into your simulation simply b

employing the Spice command

<.include device_>

. Only the device types specifically required

the circuit under simulation need be included in this way. All diode and bipolar transistor models are simp

<.model>

files. However, Darlington transistors and MOSFET models are multi-component subcircuits an

such are supplied as

<.subckt>

files.

The diode models should be included in circuit files using the normal Spice reference

Cathode_node Device_name>

.

Bipolar transistor models should be included using

Device_name>

.

All other models should be referenced as subcircuits i.e. in the form

Emitter_node Device_name>

for Darlington transistors, and

Device_name>

for MOSFETs.

The Library File

Users may prefer to use the model library. This library is a collection of all Zetex Spice models exactly as t

appear in the individual model files. By using the statement

<.lib >

, Spice will be able to acce

any model within the library without the need for multiple

<.include>

statements.

Note:

All subcircuits, whether in the library or as individual model files use the same connection sequence as Sp

for single element models, thus easing their use.