-
硅片行业术语大全
(
中英文对照
A-H)
Acceptor
-
An
element,
such
as
boron,
indium,
and
gallium
used
to
create
a
free
hole
in
a
semiconductor.
The
acceptor
atoms
are
required
to
have
one
less
valence
electron
than the
semiconductor.
受主
-
一种用来在半导体中形成空穴的元素，
比如硼、
铟和
镓。
受主原子必须比半导体元
素少一价电子
Alignment Precision - Displacement
of patterns that occurs during the
photolithography process.
套准精度
-
在光刻工艺中转移图形的精度。
Anisotropic - A process of etching that
has very little or no undercutting
各向异性
-
在蚀刻过程中，只做少量或不做侧向凹刻。
Area
Contamination
-
Any
foreign
particles
or
material
that
are
found
on
the
surface
of
a
wafer.
This
is
viewed
as
discolored
or
smudged,
and
it
is
the
result
of
stains,
fingerprints, water spots, etc.
沾污区域
-
任何在晶圆片表面的外
来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry - The angle
measured between the plane of incidence and
the major axis of the ellipse.
椭圆方位角
-
测量入射面和主晶轴之间的角度。
Backside
-
The
bottom
surface
of
a
silicon
wafer.
(Note:
This
term
is
not
preferred;
instead, use ‘back surface’.)
背面
-
晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
Base
Silicon
Layer
-
The
silicon
wafer
that
is
located
underneath
the
insulator
layer,
which supports the silicon film on top
of the wafer.
底部硅层
-
在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar
-
Transistors
that
are
able
to
use
both
holes
and
electrons
as
charge
carriers.
双极晶体管
-
能够采用空穴和电子传导电荷的晶体管。
Bonded
Wafers
-
Two
silicon
wafers
that
have
been
bonded
together
by
silicon
dioxide,
which acts as an insulating layer.
绑定晶圆片
-
两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Bonding Interface - The area where the
bonding of two wafers occurs.
绑定面
-
两个晶圆片结合的接触区。
Buried Layer - A path of low resistance
for a current moving in a device. Many of
these dopants are antimony and arsenic.
埋层
-
为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried Oxide Layer (BOX) - The layer
that insulates between the two wafers.
氧化埋层
(BOX) -
在两个晶圆片间的绝缘层。
Carrier - Valence holes and conduction
electrons that are capable of carrying a
charge through a solid surface in a
silicon wafer.
载流子
-
晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical
Polish
(CMP)
-
A
process
of
flattening
and
polishing
wafers
that
utilizes both chemical
removal and mechanical buffing. It is used during
the
fabrication process.
化学
-
机械抛光
(CMP) -
平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此
工艺在
前道工艺中使用。
Chuck Mark - A
mark found on either surface of a wafer, caused by
either a robotic
end effector, a chuck,
or a wand.
卡盘痕迹
-
在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
Cleavage Plane - A fracture plane that
is preferred.
解理面
-
破裂面
Crack - A
mark found on a wafer that is greater than 0.25 mm
in length.
裂纹
-
长度大于
0.25
毫米的晶圆片表面微痕。
Crater
-
Visible
under
diffused
illumination,
a
surface
imperfection
on
a
wafer
that
can be
distinguished individually.
微坑
-
在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) - A
measurement of how easily charge carriers can flow
throughout a material.
传导性（电学方面）
-
一种关于载流子通过物质难易度的测量指标
。
Conductivity
Type -
The type of charge carriers in a
wafer, such as “N
-
type” and
“P
-
type”.
导电类型
-
晶圆片中载流子的类型，
N
型和
P
型。
Contaminant,
Particulate (see light point defect)
污染微粒
（参见光点缺陷）
Contamination
Area
-
An
area
that
contains
particles
that
can
negatively
affect
the
characteristics of a silicon wafer.
沾污区域
-
部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate - Particles
found on the surface of a silicon wafer.
沾污颗粒
-
晶圆片表面上的颗粒。
Crystal
Defect
-
Parts
of
the
crystal
that
contain
vacancies
and
dislocations
that
can have
an
impact on a circuit’s electrical performance.
晶体缺陷
-
部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
晶体指数
（参见米勒指数）
Depletion
Layer
-
A
region
on
a
wafer
that
contains
an
electrical
field
that
sweeps
out
charge carriers.
耗尽层
-
晶圆片上的电场区域，此区域排除载流子。
Dimple - A concave depression found on
the surface of a wafer that is visible to
the eye under the correct lighting
conditions.
表面起伏
-
在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor
-
A
contaminate
that
has
donated
extra
“free”
electrons,
thus
making
a
wafer
“N
-
Type”.
施主
-
可提供“自由”电子的搀杂物，使晶圆片呈现为
N
型。
Dopant
-
An
element
that
contributes
an
electron
or
a
hole
to
the
conduction
process,
thus
altering
the
conductivity.
Dopants
for
silicon
wafers
are
found
in
Groups
III
and V of the Periodic Table of the
Elements.
搀杂剂
-
可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂
剂可以在元素周期表的
III
和
V
族元素中发现。
Doping
-
The
process
of
the
donation
of
an
electron
or
hole
to
the
conduction
process
by a dopant.
掺杂
-
把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge Chip and Indent - An edge
imperfection that is greater than 0.25 mm.
芯片边缘和缩进
-
晶片中不完整的
边缘部分超过
0.25
毫米。
Edge Exclusion Area - The area located
between the fixed quality area and the
periphery of a wafer. (This varies
according to the dimensions of the wafer.)
边缘排除区域
-
位于质量保证区和
晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有
所不同。）
Edge Exclusion,
Nominal
(EE) - The distance between the
fixed quality
area and the
periphery of a wafer.
名义上边缘排除
(EE) -
质量保证区和晶圆片外围之间的距离。
Edge
Profile
-
The
edges
of
two
bonded
wafers
that
have
been
shaped
either
chemically
or mechanically.
边缘轮廓
-
通过化学或机械方法连接起来的两个晶圆片边缘。
Etch
-
A
process
of
chemical
reactions
or
physical
removal
to
rid
the
wafer
of
excess
materials.
蚀刻
-
通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) - The area
that is most central on a wafer surface.
质量保证区
(FQA) -
晶圆片表面中央的大部分。
Flat - A section of the perimeter of a
wafer that has been removed for wafer
orientation purposes.
平边
-
晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from
the center of the flat through the center of
the wafer to the opposite edge of the
wafer. (Perpendicular to the flat)
平口直径
-
由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test equipment used
to test resistivity of wafers.
四探针
-
测量半导体晶片表面电阻的设备。
Furnace and Thermal Processes -
Equipment with a temperature gauge used for
processing wafers. A constant
temperature is required for the process.
炉管和热处理
-
温度测量的工艺设备，具有恒定的处理温度。
Front
Side
-
The
top
side
of
a
silicon
wafer.
(This
term
is
not
preferred;
use
front
surface
instead.)
正面
-
晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
Goniometer - An instrument used in
measuring angles.
角度计
-
用来测量角度的设备。
Gradient, Resistivity (not preferred;
see resistivity variation)
电阻梯度
（不推荐使用，参见“电阻变化”）
Groove - A scratch that was not
completely polished out.
凹槽
-
没有被完全清除的擦伤。
Hand
Scribe
Mark
-
A
marking
that
is
hand
scratched
onto
the
back
surface
of
a
wafer
for identification purposes.
手工印记
-
为区分不同的晶圆片而手工在背面做出的标记。
Haze
-
A
mass
concentration
of
surface
imperfections,
often
giving
a
hazy
appearance
to the wafer.
雾度
-
晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Hole - Similar to a positive charge,
this is caused by the absence of a valence
electron.
空穴
-
和正电荷类似，是由缺少价电子引起的。
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