硅片行业术语大全中英文对照I-Z

毫米的缺陷。

Notch - An indent on the edge of a

wafer

used for orientation purposes.

凹槽

-

晶圆片边缘上用于晶向定位的小凹槽。

Orange Peel - A roughened surface that is visible to the unaided eye.

桔皮

-

可以用肉眼看到的粗糙表面

Orthogonal Misorientation -

直角定向误差

-

Particle

-

A

small

piece

of

material

found

on

a

wafer

that

is

not

connected

with it.

颗粒

-

晶圆片上的细小物质。

Particle Counting -

Wafer

s that are used to test tools for particle

contamination.

颗粒计算

-

用来测试晶圆片颗粒污染的测试工具。

Particulate Contamination - Particles found on the surface of a

wafer

.

They appear as bright points when a collineated light is shined on the

wafer

.

颗粒污染

-

晶圆片表面的颗粒。

Pit - A non-removable imperfection found on the surface of a

wafer

.

深坑

-

一种晶圆片表面无法消除的缺陷。

Point Defect - A crystal defect that is an impurity, such as a lattice

vacancy or an interstitial atom.

点缺陷

-

不纯净的晶缺陷，例如格子空缺或原子空隙。

Preferential Etch -

优先蚀刻

-

Premium

Wafer

-

A

wafer

that

can

be

used

for

particle

counting,

measuring

pattern resolution in the photolithography process, and metal

contamination monitoring. This

wafer

has

very strict specifications for

a specific usage, but looser specifications than the prime

wafer

.

测试晶圆片

-

影印过程中用于颗粒 计算、

测量溶解度和检测金属污染的晶圆片。

对于具体应用该晶 圆片有严格的要求，但是要比主晶圆片要求宽松些。

Primary Orientation Flat - The longest flat found on the

wafer

.

主定位边

-

晶圆片上最长的定位边。

Process Test

Wafer

- A

wafer

that can be used for processes as well as

area cleanliness.

加工测试晶圆片

-

用于区域清洁过程中的晶圆片。

Profilometer - A tool that is used for measuring surface topography.

表面形貌剂

-

一种用来测量晶圆片表面形貌的工具。

Resistivity

(Electrical)

-

The

amount

of

difficulty

that

charged

carriers

have in moving throughout material.

电阻率（电学方面）

-

材料反抗或对抗电荷在其中通过的一种物理特性。

Required

-

The

minimum

specifications

needed

by

the

customer

when

ordering

wafer

s.

必需

-

订购晶圆片时客户必须达到的最小规格。

Roughness - The texture found on the surface of the

wafer

that is spaced

very closely together.

粗糙度

-

晶圆片表面间隙很小的纹理。

Saw Marks - Surface irregularities

锯痕

-

表面不规则。

Scan Direction - In the flatness calculation, the direction of the

subsites.

扫描方向

-

平整度测量中，局部平面的方向。

Scanner Site Flatness -

局部平整度扫描仪

-

Scratch - A mark that is found on the

wafer

surface.

擦伤

-

晶圆片表面的痕迹。

Secondary

Flat

-

A

flat

that

is

smaller

than

the

primary

orientation

flat.

The

position

of

this

flat

determines

what

type

the

wafer

is,

and

also

the

orientation of the

wafer

.

第二定位边

-

比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。

Shape -

形状

-

Site - An area on the front surface of the

wafer

that has sides parallel

and perpendicular to the primary orientation flat. (This area is

rectangular in shape)

局部表面

-

晶圆片前面上平行或垂直于主定位边方向的区域。

Site Array - a neighboring set of sites

局部表面系列

-

一系列的相关局部表面。

Site Flatness -

局部平整

-

Slip

-

A

defect

pattern

of

small

ridges

found

on

the

surface

of

the

wafer

.

划伤

-

晶圆片表面上的小皱造成的缺陷。

Smudge - A defect or contamination found on the

wafer

caused by

fingerprints.

污迹

-

晶圆片上指纹造成的缺陷或污染。

Sori -

Striation - Defects or contaminations found in the shape of a helix.

条痕

-

螺纹上的缺陷或污染。

Subsite,

of

a

Site

-

An

area

found

within

the

site,

also

rectangular.

The

center of the subsite must be located within the original site.

局部子表面

-

局部表面内的区域， 也是矩形的。子站中心必须位于原始站点内

部。

Surface Texture

-

Variations

found

on

the real

surface of the

wafer

that

deviate from the reference surface.

表面纹理

-

晶圆片实际面与参考面的差异情况。

Test

Wafer

-

A

silicon

wafer

that

is

used

in

manufacturing

for

monitoring

and testing purposes.

测试晶圆片

-

用于生产中监测和测试的晶圆片。

Thickness of Top Silicon Film - The distance found between the face of

the top silicon film and the surface of the oxide layer.

顶部硅膜厚度

-

顶部硅层表面和氧化层表面间的距离。

Top Silicon Film - The layer of silicon on which semiconductor devices

are placed. This is located on top of the insulating layer.

顶部硅膜

-

生产半导体电路的硅层，位于绝缘层顶部。

Total Indicator Reading (TIR) - The smallest distance between planes on

the surface of the

wafer

.

总计指示剂数

(TIR) -

晶圆片表面位面间的最短距离。

Virgin Test

Wafer

- A

wafer

that has not been used in manufacturing or

other processes.

原始测试晶圆片

-

还没有用于生产或其他流程中的晶圆片。

Void

-

The

lack

of

any

sort

of

bond

(particularly

a

chemical

bond)

at

the

site of bonding.

无效

-

在应该绑定的地方没有绑定（特别是化学绑定）。

Waves - Curves and contours found on the surface of the

wafer

that can

be seen by the naked eye.

波浪

-

晶圆片表面通过肉眼能发现的弯曲和曲线。

Waviness - Widely spaced imperfections on the surface of a

wafer

.

波纹

-

晶圆片表面经常出现的缺陷。

?

Acceptor

-

An

element,

such

as

boron,

indium,

and

gallium

used

to

create

a

fr

ee

hole

in

a

semiconductor.

The

acceptor

atoms

are

required

to

have

one

less

vale

nce

electron

than

the

semiconductor.

?

受主

-

一 种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体

元素少一价 电子

?

Alignment

Precision

-

Displacement

of

patterns

that

occurs

during

the

photolit

hography

process.

?

套准精度

-

在光刻工艺中转移图形的精度。

?

Anisotropic

-

A

process

of

etching

that

has

very

little

or

no

undercutting

?

各向异性

-

在蚀刻过程中，只做少量或不做侧向凹刻。

?

Area

Contamination

-

Any

foreign

particles

or

material

that

are

found

on

the

surface

of

a

wafer.

This

is

viewed

as

discolored

or

smudged,

and

it

is

the

result

of

stains,

fingerprints,

water

spots,

etc.

?

沾污区域

-

任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。

?

Azimuth,

in

Ellipsometry

-

The

angle

measured

between

the

plane

of

incidenc

e

and

the

major

axis

of

the

ellipse.

?

椭圆方位角

-

测量入射面和主晶轴之间的角度。

?

Backside

-

The

bottom

surface

of

a

silicon

wafer.

(Note:

This

term

is

not

prefe

rred;

instead,

use

‘back

surface’.)

?

背面

-

晶 圆片的底部表面。（注：不推荐该术语，建议使用

“

背部表面< /p>

”

）

?

Base

Silicon

Layer

-

The

silicon

wafer

that

is

located

underneath

the

insulator

layer,

which

supports

the

silicon

film

on

top

of

the

wafer.

?

底部硅层

-

在绝缘层下部的晶圆片，是顶部硅层的基础。

?

Bipolar

-

Transistors

that

are

able

to

use

both

holes

and

electrons

as

charge

ca

rriers.

?

双极晶体管

-

能够采用空穴和电子传导电荷的晶体管。

?

Bonded

Wafers

-

Two

silicon

wafers

that

have

been

bonded

together

by

silicon

dioxide,

which

acts

as

an

insulating

layer.

?

绑定晶圆片

-

两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。

?

Bonding

Interface

-

The

area

where

the

bonding

of

two

wafers

occurs.

?

绑定面

-

两个晶圆片结合的接触区。

?

Buried

Layer

-

A

path

of

low

resistance

for

a

current

moving

in

a

device.

Man

y

of

these

dopants

are

antimony

and

arsenic.

?

埋层

-

为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。

?

Buried

Oxide

Layer

(BOX)

-

The

layer

that

insulates

between

the

two

wafers.

?

氧化埋层

(BOX)

-

在两个晶圆片间的绝缘层。

?

Carrier

-

Valence

holes

and

conduction

electrons

that

are

capable

of

carrying

a

charge

through

a

solid

surface

in

a

silicon

wafer.

?

载流子

-

晶圆片中用来传导电流的空穴或电子。

?

Chemical-Mechanical

Polish

(CMP)

-

A

process

of

flattening

and

polishing

wa

fers

that

utilizes

both

chemical

removal

and

mechanical

buffing.

It

is

used

during

th

e

fabrication

process.

?

化学

-

机械抛光

( CMP)

-

平整和抛光晶圆片的工 艺，

采用化学移除和机械抛光两种方式。

此工艺在前道工艺中使 用。

?

Chuck

Mark

-

A

mark

found

on

either

surface

of

a

wafer,

caused

by

either

a

r

obotic

end

effector,

a

chuck,

or

a

wand.

?

卡盘痕迹

-

在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。

?

Cleavage

Plane

-

A

fracture

plane

that

is

preferred.

?

解理面

-

破裂面

?

Crack

-

A

mark

found

on

a

wafer

that

is

greater

than

0.25

mm

in

length.

?

裂纹

-

长 度大于

0.25

毫米的晶圆片表面微痕。

?

Crater

-

Visible

under

diffused

illumination,

a

surface

imperfection

on

a

wafer

th

at

can

be

distinguished

individually.

?

微坑

-

在扩散照明下可见的，晶圆片表面可区分的缺陷。

?

Conductivity

(electrical)

-

A

measurement

of

how

easily

charge

carriers

can

fl

ow

throughout

a

material.

?

传导性（电学方面）

-

一种关于载流子通过物质难易度的测量指标

。

?

Conductivity

Type

-

The

type

of

charge

carriers

in

a

wafer,

such

as

“N

-

type”

and

“P

-

type”.

?

导电类型

-

晶圆片中载流子的类型，

N

型和

P< /p>

型。

?

Contaminant,

Particulate

(see

light

point

defect)

?

污染微粒

（参见光点缺陷）

?

Contamination

Area

-

An

area

that

contains

particles

that

can

negatively

affect

the

characteristics

of

a

silicon

wafer.

?

沾污区域

-

部分晶圆片区域被颗粒沾污，造成不利特性影响。

?

Contamination

Particulate

-

Particles

found

on

the

surface

of

a

silicon

wafer.

?

沾污颗粒

-

晶圆片表面上的颗粒。

?

Crystal

Defect

-

Parts

of

the

crystal

that

contain

vacancies

and

dislocations

tha

t

can

have

an

impact

on

a

circuit’s

electrical

performance.

?

晶体缺陷

-

部分晶体包含的、会影响电路性能的空隙和层错。

?

Crystal

Indices

(see

Miller

indices)

?

晶体指数

（参见米勒指数）

?

Depletion

Layer

-

A

region

on

a

wafer

that

contains

an

electrical

field

that

sw

eeps

out

charge

carriers.

?

耗尽层

-

晶圆片上的电场区域，此区域排除载流子。

?

Dimple

-

A

concave

depression

found

on

the

surface

of

a

wafer

that

is

visible

t

o

the

eye

under

the

correct

lighting

conditions.

?

表面起伏

-

在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。

?

Donor

-

A

contaminate

that

has

donated

extra

“free”

electrons,

thus

making

a

wafer

“N

-

Type”.

?

施主

-

可 提供

“

自由

”

电子的搀杂物，使晶圆片呈现为

N

型。