-
Ingot
- A cylindrical solid made
of polycrystalline or single crystal
silicon from which wafers are cut.
晶锭
-
由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
Laser
Light-
Scattering Event - A signal pulse
that locates surface
imperfections on a
wafer.
激光散射
-
由晶圆片表面缺陷引起的脉冲信号。
Lay
- The main
direction of surface texture on a wafer.
层
-
晶圆片表面结构的主要方向。
Light
Point
Defect
(LPD)
(Not
preferred; see
localized light-scatterer)
光点缺陷
(LPD)
（不推荐使用，参见“局部光散射”）
Lithography
-
The process used to transfer patterns onto wafers.
光刻
-
从掩膜到圆片转移的过程。
Localized Light-Scatterer
-
One feature on the surface of a wafer, such
as
a
pit
or
a
scratch
that
scatters
light.
It
is
also
called
a
light
point
defect.
局部光散射
-
晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺
陷。
Lot
- Wafers of similar
sizes and characteristics placed together in a
shipment.
批次
-
具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority
Carrier
-
A
carrier,
either
a
hole
or
an
electron
that
is
dominant
in a
specific region, such as electrons in an N-Type
area.
多数载流子
-
一种
载流子，在半导体材料中起支配作用的空穴或电子，例如在
N
型
中是电子。
Mechanical Test Wafer
- A
silicon wafer used for testing purposes.
机械测试晶圆片
-
用于测试的晶圆片。
Microroughness
- Surface
roughness with spacing between the impurities
with a measurement of less than 100
μ
m.
微粗糙
-
小于
100
微米的表面粗糙部分。
Miller
Indices
,
of
a
Crystallographic
Plane
-
A
system
that
utilizes
three
numbers to identify
plan orientation in a crystal.
Miller
索指数
-
三个整数，用于确定某个并行面。这些整数是来自相同系统的
基本向量。<
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Minimal
Conditions or Dimensions
- The
allowable conditions for
determining
whether or not a wafer is considered acceptable.
最小条件或方向
-
确定晶圆片是否合格的允许条件。
Minority Carrier
- A
carrier, either a hole or an electron that is not
dominant in a specific region, such as
electrons in a P-Type area.
少数载流子
-
在半导体材料中不起
支配作用的移动电荷，在
P
型中是电子，在
N
型中是空穴。
Mound
-
A
raised
defect
on
the
surface
of
a
wafer
measuring
more
than
0.25
mm.
堆垛
-
晶圆片表面超过
0.25
毫米的缺陷。
Notch
- An
indent on the edge of a wafer used for orientation
purposes.
凹槽
-
晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel
- A
roughened surface that is visible to the unaided
eye.
桔皮
-
可以用肉眼看到的粗糙表面
Orthogonal Misorientation
-
直角定向误差
-
Particle
-
A
small
piece
of
material
found
on
a
wafer
that
is
not
connected
with it.
颗粒
-
晶圆片上的细小物质。
Particle Counting
- Wafers
that are used to test tools for particle
contamination.
颗粒计算
-
用来测试晶圆片颗粒污染的测试工具。
Particulate
Contamination
- Particles found on the
surface of a wafer.
They appear as
bright points when a collineated light is shined
on the
wafer.
颗粒污染
-
晶圆片表面的颗粒。
Pit
- A non-removable
imperfection found on the surface of a wafer.
深坑
-
一种晶圆片表面无法消除的缺陷。
Point Defect
- A crystal
defect that is an impurity, such as a lattice
vacancy or an interstitial atom.
点缺陷
-
不纯净的晶缺陷，例如格子空缺或原子空隙。
Preferential Etch -
优先蚀刻
-
Premium
Wafer
-
A
wafer
that
can
be
used
for
particle
counting,
measuring
pattern resolution in the
photolithography process, and metal
contamination monitoring. This wafer
has
very strict specifications for
a specific usage, but looser
specifications than the prime wafer.
测试晶圆片
-
影印过程中用于颗粒
计算、
测量溶解度和检测金属污染的晶圆片。
对于具体应用该晶
圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat
-
The longest flat found on the wafer.
主定位边
-
晶圆片上最长的定位边。
Process Test Wafer
- A wafer
that can be used for processes as well as
area cleanliness.
加工测试晶圆片
-
用于区域清洁过程中的晶圆片。
Profilometer
- A tool that
is used for measuring surface topography.
表面形貌剂
-
一种用来测量晶圆片表面形貌的工具。
Resistivity
(Electrical)
-
The
amount
of
difficulty
that
charged
carriers
have in moving throughout material.
电阻率（电学方面）
-
材料反抗或对抗电荷在其中通过的一种物理特性。
Required
-
The
minimum
specifications
needed
by
the
customer
when
ordering
wafers.
必需
-
订购晶圆片时客户必须达到的最小规格。
Roughness
- The
texture found on the surface of the wafer that is
spaced
very closely together.
粗糙度
-
晶圆片表面间隙很小的纹理。
Saw Marks
- Surface
irregularities
锯痕
-
表面不规则。
Scan Direction
- In the
flatness calculation, the direction of the
subsites.
扫描方向
-
平整度测量中，局部平面的方向。
Scanner Site Flatness
-
局部平整度扫描仪
-
Scratch
- A mark that is
found on the wafer surface.
擦伤
-
晶圆片表面的痕迹。
Secondary
Flat
-
A
flat
that
is
smaller
than
the
primary
orientation
flat.
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