硅片专业术语

硅片专业术语

Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a

semiconductor

. The acceptor atoms are required to have one less valence electron than the

semiconductor

.

受主

-

一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导

Alignment Precision - Displacement of patterns that occurs during the

photolithography process.

套准精度

-

在光刻工艺中转移图形的精度。

Anisotropic - A process of etching that has very little or no undercutting

各向异性

-

在蚀刻过程中，只做少量或不做侧向凹刻。

Area Contamination - Any foreign particles or material that are found on the surface of

a wafer

. This is viewed as discolored or smudged, and it is the result of stains, fingerprints,

water spots, etc.

沾污区域

-

任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。

Azimuth, in Ellipsometry - The angle measured between the plane of incidence and

the major axis of the ellipse.

椭圆方位角

-

测量入射面和主晶轴之间的角度。

Backside - The bottom surface of a silicon wafer

. (Note: This term is not preferred;

instead, use

?

back surface

?

.)

背面

-

晶圆片的底部表面。

（注：不推荐该术语，建议使用

背部表面

”

）

Base Silicon Layer - The silicon wafer that is located underneath the insulator layer

,

which supports the silicon film on top of the wafer

.

底部硅层

-

在绝缘层下部的晶圆片，是顶部硅层的基础。

Bipolar - Transistors that are able to use both holes and electrons as charge carriers.

双极晶体管

-

能够采用空穴和电子传导电荷的晶体管。

Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide,

which acts as an insulating layer

.

绑定晶圆片

-

两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。

Bonding Interface - The area where the bonding of two wafers occurs.

绑定面

-

两个晶圆片结合的接触区。

Buried Layer - A path of low resistance for a current moving in a device. Many of these

dopants are antimony and arsenic.