-
Acceptor - An element, such as boron,
indium, and gallium used to create a
free hole in a semiconductor. The
acceptor atoms are required to have one
less valence electron than the
semiconductor.
受主
-
一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主
原子必须比半导体元素少一
价电子
Alignment
Precision - Displacement of patterns that occurs
during the
photolithography process.
套准精度
-
在光刻工艺中转移图形的精度。
Anisotropic - A process of
etching that has very little or no undercutting
各向异性
-
在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination - Any
foreign particles or material that are found on
the
surface of a wafer. This is viewed
as discolored or smudged, and it is the
result of stains, fingerprints, water
spots, etc.
沾污区域
-
任何在晶圆片表面的外来粒子或物质。由沾污、手印和水<
/p>
滴产生的污染。
Azimuth, in Ellipsometry - The angle
measured between the plane of
incidence
and the major axis of the ellipse.
椭圆方位角
-
测量入射面和主晶轴之间的角度。
Backside - The bottom surface of a
silicon wafer. (Note: This term is not
preferred; instead, use ?back
surface?.)
背面
-
晶圆片的底部表面。
（注：
不推荐该术语，
建议使用
“
< br>背部表面
”
）
Base Silicon Layer - The
silicon wafer that is located underneath the
insulator layer, which supports the
silicon film on top of the wafer.
底部硅层
-
在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar - Transistors that
are able to use both holes and electrons as charge
carriers.
双极晶体管
-
能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon
wafers that have been bonded together by
silicon dioxide, which acts as an
insulating layer.
绑定晶圆片
-
两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Bonding Interface - The
area where the bonding of two wafers occurs.
绑定面
-
两个晶圆片结合的接触区。
Buried Layer - A path of low resistance
for a current moving in a device.
Many
of these dopants are antimony and arsenic.
埋层
-
为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried Oxide Layer (BOX) -
The layer that insulates between the two
wafers.
氧化埋层
(BOX) -
在两个晶圆片间的绝缘层。
Carrier - Valence holes and conduction
electrons that are capable of carrying
a charge through a solid surface in a
silicon wafer.
载流子
-
晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish
(CMP) - A process of flattening and polishing
wafers that utilizes both chemical
removal and mechanical buffing. It is
used during the fabrication process.
化学
-
机械
抛光
(CMP) -
平整和抛光晶圆片的工艺，
采用化学移除和机械
抛光两种方式。此工艺在前道工艺中使用。
Chuck Mark - A mark
found on either surface of a wafer, caused by
either a
robotic end effector, a chuck,
or a wand.
卡盘痕迹
-
在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕<
/p>
迹。
Cleavage Plane - A fracture plane that
is preferred.
解理面
-
破裂面
Crack - A mark found on a wafer that is
greater than 0.25 mm in length.
裂纹
-
长
度大于
0.25
毫米的晶圆片表面微痕。
Crater - Visible under
diffused illumination, a surface imperfection on a
wafer that can be distinguished
individually.
微坑
-
在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) -
A measurement of how easily charge carriers can
flow throughout a material.
传导性（电学方面）
-
一种关于载流子通过物质难易度的测量指标
。
Conductivity
Type -
The type of charge carriers in a
wafer, such as “N
-
type”
and “P
-
type”.
导电类型
-
晶圆片中载流子的类型，
N
型和
P
型。
Contaminant, Particulate
(see light point defect)
污染微粒
（参见光点缺陷）
Contamination Area - An area that
contains particles that can negatively
affect the characteristics of a silicon
wafer.
沾污区域
-
部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate -
Particles found on the surface of a silicon wafer.
沾污颗粒
-
晶圆片表面上的颗粒。
Crystal Defect - Parts of
the crystal that contain vacancies and
dislocations
that can have
an impact on a circuit?s electrical
performance.
晶体缺陷
-
部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
晶体指数
（参见米勒指数）
Depletion Layer - A region on a wafer
that contains an electrical field that
sweeps out charge carriers.
耗尽层
-
晶圆片上的电场区域，此区域排除载流子。
Dimple - A concave
depression found on the surface of a wafer that is
visible to the eye under the correct
lighting conditions.
表面起伏
-
在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor -
A
contaminate that has donated extra “free”
electrons, thus makin
g
a
wafer “N
-
Type”.
施主
-
可
提供
“
自由
”
电子的搀杂物，使晶圆片呈现为
N
型。
Dopant - An element that
contributes an electron or a hole to the
conduction
process, thus altering the
conductivity. Dopants for silicon wafers are found
in Groups III and V of the Periodic
Table of the Elements.
搀杂剂
-
可以为传导过程提供电子或空穴的元素，此元素可以改变传
导特性。晶圆片搀杂
剂可以在元素周期表的
III
和
V
族元素中发现。
Doping - The process of the
donation of an electron or hole to the
conduction process by a dopant.
掺杂
-
把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge Chip and Indent - An
edge imperfection that is greater than 0.25 mm.
芯片边缘和缩进
-
晶片中不完整的边缘部分超过
0.
25
毫米。
Edge Exclusion Area - The area located
between the fixed quality area and
the
periphery of a wafer. (This varies according to
the dimensions of the
wafer.)
边缘排除区域
-
位于质量保证区和晶圆片外围之间的区域。（根据晶
圆片的尺寸不同而有所不同。）
Edge Exclusion, Nominal (EE) - The
distance between the fixed quality area
and the periphery of a wafer.
名义上边缘排除
(EE) -
质量保证区和晶圆片外围之间的距离。
Edge Profile - The edges of
two bonded wafers that have been shaped either
chemically or mechanically.
边缘轮廓
-
通过化学或机械方法连接起来的两个晶圆片边缘。
Etch - A process of chemical reactions
or physical removal to rid the wafer
of
excess materials.
蚀刻
-
通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) -
The area that is most central on a wafer surface.
质量保证区
(FQA) -
晶圆片表面中央的大部分。
Flat - A section of the perimeter of a
wafer that has been removed for wafer
orientation purposes.
平边
-
晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The
measurement from the center of the flat through
the
center of the wafer to the opposite
edge of the wafer. (Perpendicular to the
flat)
平口直径
-
由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test
equipment used to test resistivity of wafers.
四探针
-
测量半导体晶片表面电阻的设备。
Furnace and Thermal Processes -
Equipment with a temperature gauge used
for processing wafers. A constant
temperature is required for the process.
炉管和热处理
-
温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon
wafer. (This term is not preferred; use
front surface instead.)
正面
-
晶
圆片的顶部表面（此术语不推荐，建议使用
“
前部表面
”
）。
Goniometer - An instrument used in
measuring angles.
角度计
-
用来测量角度的设备。
Gradient, Resistivity (not preferred;
see resistivity variation)
电阻梯度
（不推荐使用，参见
“
电阻变化
”
）
Groove - A
scratch that was not completely polished out.
凹槽
-
没有被完全清除的擦伤。
Hand Scribe Mark - A marking that is
hand scratched onto the back surface
of
a wafer for identification purposes.
手工印记
-
为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface
imperfections, often giving a hazy
appearance to the wafer.
雾度
-
晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。